Improved simulation modelling and its verification for SiC MOSFET

Of crucial importance is to accurately simulate its switching characteristics for the application of SiC MOSFET. Due ultrafast capability, MOSFET dependent on interelectrode capacitances and extremely sensitive parasitics. Therefore, accurate modelling knowledge parasitics are required. Here, an improved model driven by empirical formula with three segments non-linear drain-to-gate capacitance in relationship drain-to-source voltage developed. In this way, fitting at inflection point that has a great impact delay much improved. By simple self-made high-voltage C–V measurement systems, accuracy proposed verified. More importantly, intruded commonly-used coaxial shunt current loop analysed detail. The equivalent circuit incorporated into device simulation compensate errors. can be more reliably verified evaluated. A double pulse test built verify model. comparison experimental results, works well different operating conditions offers reliable approach.